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LI Xiangmeng,ZHU Xijing,WEI Huifen,CUI Xueliang,LI Jiansu.Effect of size and shape on reflective properties of silicon nanocone arrays[J].Journal of Hebei University of Science and Technology,2018,39(6):487-493
尺寸形貌对硅纳米锥阵列结构反射特性的影响
Effect of size and shape on reflective properties of silicon nanocone arrays
Received:September 01, 2018  Revised:September 28, 2018
DOI:10.7535/hbkd.2018yx06002
中文关键词:  等离子体动力学  干法刻蚀  硅纳米锥阵列  亚波长结构  减反射
英文关键词:plasma dynamics  dry etching  silicon nanocone array  subwavelength structure  antireflection
基金项目:国家自然科学基金(51705479); 山西省青年科技研究基金(201701D221128, 201701D221167); 中北大学校科学基金(2017005)
Author NameAffiliationE-mail
LI Xiangmeng Shanxi Key Laboratory of Advanced Manufacturing Technology North University of China Taiyuan xmli123@nuc.edu.cn 
ZHU Xijing Shanxi Key Laboratory of Advanced Manufacturing Technology North University of China Taiyuan  
WEI Huifen School of Instrument and Electronics North University of China Taiyuan  
CUI Xueliang Shanxi Key Laboratory of Advanced Manufacturing Technology North University of China Taiyuan  
LI Jiansu Shanxi Key Laboratory of Advanced Manufacturing Technology North University of China Taiyuan  
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中文摘要:
      为了探讨不同尺度和形貌的硅纳米锥阵列结构表面的光学特性,采用基于纳米粒子自组装薄膜掩蔽的亚微米干法刻蚀工艺,在硅基材表面制备了纳米锥阵列结构,并对纳米锥阵列结构进行了形貌表征及光学测试。结果表明,采用SF6和C4F8混合气体,其体积流量分别为12 sccm和27 sccm,功率750 W,偏压25 V时,可以获得光学减反射性能优异的纳米锥阵列结构。通过调节刻蚀时长获得形貌相似而尺寸不同的硅纳米锥阵列结构。200 nm和400 nm周期硅纳米锥阵列结构表面具有2%~3%的反射率,而800 nm周期硅纳米锥阵列结构表面则接近于硅基材背面的反射率并高于10%,说明亚波长结构的减反射特性更加显著。从实验上揭示了尺寸形貌对硅纳米锥阵列结构反射特性的影响规律,为进一步研究光学器件方面的应用提供了参考。
英文摘要:
      In order to investigate the optical properties of silicon nanocone arrays with different sizes and shapes, the nanocone arrays are fabricated on silicon substrate by submicron dry etching process masked by self-assembled nano-particles. The morphology and optical properties of the nano-cone arrays are characterized. The results show that the nanocone arrays with excellent optical antireflection performance can be obtained when the plasma flow ratio of SF6 and C4F8 is 12 sccm,27 sccm, the power is 750 W and the bias voltage is 25 V. By adjusting the etching time, silicon nanocone structures with similar morpho-logy and different sizes can be obtained. The reflectivity of 200 nm and 400 nm periodic silicon nanocone arrays is 2%~3%, while that of 800 nm periodic silicon nanocone arrays is close to and 10% higher than the reflectivity of silicon substrate, which indicates that the anti-reflectivity of sub-wavelength structure is more remarkable. The result reveals experimentally the dimensional and morphological effect of silicon nanocone array structures on the antireflective properties, which may shed some important insights on further investigation or application in optical devices.
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